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AM80912-085
.REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE = 85 W MIN. WITH 7.5 dB GAIN OUT
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM80912-085 BRANDING 80912-85
PIN CONNECTION
DESCRIPTION The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-085 is housed in a unique BIGPACTM Hermetic Metal/Ceramic package with inABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
300 8.0 40 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.75 C/W
*Applies only to rated RF amplifier operation
August 1992
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ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Valu e Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 25mA IE = 10mA IC = 25mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA RBE = 10 VCE = 35V IC = 2A
55 3.5 55 -- 20
-- -- -- -- --
-- -- -- 20 200
V V V mA --
DYNAMIC
Value Symbol Test Conditions Min. Typ. Max. Unit
POUT c GP
Note:
f = 960 -- 1215MHz f = 960 -- 1215MHz f = 960 -- 1215MHz
PIN = 15W PIN = 15W PIN = 15W
VCC = 35V VCC = 35V VCC = 35V
85 40 7.5
-- -- --
-- -- --
W % dB
Pul se format: 6.4 S on 6.6 S off , repeat f or 3.3 ms, then off for 4.5125 ms Duty Cycle: Burst 49.2%, overall 20.8%
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IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE ZIN ZIN L H
PIN = 15 W VCC = 35 V Normalized to 10 ohms FREQ. L = 960 MHz * = 1025 MHz M = 1090 MHz * = 1150 MHz H = 1215 MHz ZIN() 3.0 + j 5.0 3.5 + j 6.0 5.5 + j 5.5 5.5 + j 5.0 5.3 + j 4.5 ZCL() 7.0 - j 5.0 5.3 - j 3.0 3.7 - j 1.8 3.3 - j 2.0 3.0 - j 2.5
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL L
ZCL
H
PIN = 15 W VCC = 35 V Normalized to 10 ohms
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TEST CIRCUIT Ref. Dwg. No. J-313119
.080
All dimensions are in inches. Substrate material: .025 thick AI2O3 (Er = 9.6) C1 C2 C3 C4 : : : : 0.3--3.5 pF Variable Johanson Capacitor or Equiv. 0.3--3.5 pF Variable Johanson Capacitor or Equiv. 100 pF Chip Capacitor 1500 pF Erie RF Feedthrough, or Equiv. C5 C6 L1 L2 : : : : 100 MF, Electrolytic Capacitor, 50V 1500 pF Erie RF Feedthrough, or Equiv. No. 32 Wire, 4 Turns 1/16" I.D. No. 32 Wire, 4 Turns 1/16" I.D.
PACKAGE MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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